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US Patent 10354916 Methods for wordline separation in 3D-NAND devices

Patent 10354916 was granted and assigned to Applied Materials on July, 2019 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 11930637 Confined charge trap layer
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Patent abstract

Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=1035491600
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Patent Citations Received
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US Patent 11638377 Self-aligned select gate cut for 3D NAND
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Infobox
Is a
Patent
Patent
0
Patent Applicant
Applied Materials
Applied Materials
0
Current Assignee
Applied Materials
Applied Materials
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
103549160
Date of Patent
July 16, 2019
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Patent Application Number
159861890
Date Filed
May 22, 2018
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=103549160
Patent Citations Received
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US Patent 10886172 Methods for wordline separation in 3D-NAND devices
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US Patent 10950498 Selective and self-limiting tungsten etch process
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US Patent 11587796 3D-NAND memory cell structure
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Patent Primary Examiner
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David S. Blum
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edited on 22 Feb, 2023
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Patent Citations Received
‌
US Patent 11587796 3D-NAND memory cell structure
0
Edits on 25 Sep, 2022
"Entity importer update"
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edited on 25 Sep, 2022
Infobox
Is a
Patent
Patent
0
Patent Applicant
Applied Materials
Applied Materials
0
Current Assignee
Applied Materials
Applied Materials
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
103549160
Date of Patent
July 16, 2019
0
Patent Application Number
159861890
Date Filed
May 22, 2018
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=103549160
Patent Citations Received
‌
US Patent 10886172 Methods for wordline separation in 3D-NAND devices
0
‌
US Patent 10950498 Selective and self-limiting tungsten etch process
0
Patent Primary Examiner
‌
David S. Blum
0
Edits on 24 Sep, 2022
"update citations for inverse infoboxes"
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=10354916
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edited on 10 Feb, 2022
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Patent citations received
‌
US Patent 10950498 Selective and self-limiting tungsten etch process
Edits on 9 Feb, 2022
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edited on 9 Feb, 2022
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Patent citations received
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US Patent 10886172 Methods for wordline separation in 3D-NAND devices
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 US Patent 10354916 Methods for wordline separation in 3D-NAND devices

Infobox
Is a
Patent
Patent
Patent applicant
Applied Materials
Applied Materials
Current assignee
Applied Materials
Applied Materials
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10354916
Date of patent
July 16, 2019
Patent application number
15986189
Date Filed
May 22, 2018
Patent primary examiner
‌
David S. Blum

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