US Patent 10366930 Self-aligned gate cut isolation

A method includes forming a plurality of fins above a substrate. A first placeholder gate electrode is formed above the plurality of fins. The first placeholder gate electrode includes a placeholder material. A first sacrificial gate cut structure of a sacrificial material different than the placeholder material embedded in the first placeholder gate electrode is formed. A portion of the first placeholder gate electrode positioned above the first sacrificial gate cut structure is removed, exposing the first sacrificial gate cut structure. The first sacrificial gate cut structure is removed to define a gate cut cavity extending vertically through the first placeholder gate electrode. A dielectric material is formed in the gate cut cavity to define a gate cut structure. The first placeholder gate electrode is removed to define a first gate cavity segmented by the gate cut structure. A first replacement gate structure is formed in the first gate cavity.