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US Patent 10418493 Tight pitch stack nanowire isolation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 19, 2017
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Date of Patent
September 17, 2019
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Patent Application Number
15847296
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Patent Citations Received
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US Patent 11495688 Source and drain epitaxy and isolation for gate structures
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US Patent 10985279 Source and drain epitaxy and isolation for gate structures
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US Patent 11011651 Tight pitch stack nanowire isolation
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US Patent 11664656 ESD protection for integrated circuit devices
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US Patent 11368016 ESD protection for integrated circuit devices
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US Patent 10957802 Methods of forming tight pitch stack nanowire isolation
Patent Inventor Names
Effendi Leobandung
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10418493
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Patent Primary Examiner
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Dung A. Le
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