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US Patent 10424723 Magnetic tunnel junction devices including an optimization layer

Patent 10424723 was granted and assigned to Spin Memory on September, 2019 by the United States Patent and Trademark Office.

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Is a

Patent attributes

Patent Applicant

Spin Transfer Technologies

Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Date of Patent

September 24, 2019

Patent Application Number

15859249

Date Filed

December 29, 2017

Patent Citations

US Patent 10115446 Spin transfer torque MRAM device with error buffer

US Patent 10026609 Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures

US Patent 10043851 Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching

US Patent 10163479 Method and apparatus for bipolar memory write-verify

Patent Citations Received

US Patent 11626559 Multi terminal device stack formation methods

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Patent Primary Examiner

Patent abstract

A Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of cell pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the cell pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the cell pillar.

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