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US Patent 10424723 Magnetic tunnel junction devices including an optimization layer

Patent 10424723 was granted and assigned to Spin Memory on September, 2019 by the United States Patent and Trademark Office.

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Patent abstract

A Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of cell pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the cell pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the cell pillar.

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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=1042472300
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Patent Citations Received
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US Patent 11626559 Multi terminal device stack formation methods
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 US Patent 10424723 Magnetic tunnel junction devices including an optimization layer

Infobox
Is a
Patent
Patent
Patent applicant
Spin Transfer Technologies
Spin Transfer Technologies
Current assignee
‌
Spin Memory
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10424723
Date of patent
September 24, 2019
Patent application number
15859249
Date Filed
December 29, 2017
Patent citations
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US Patent 10026609 Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures
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US Patent 10043851 Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
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US Patent 10115446 Spin transfer torque MRAM device with error buffer
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US Patent 10163479 Method and apparatus for bipolar memory write-verify
Patent primary examiner
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Bilkis Jahan

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