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US Patent 10497796 Vertical transistor with reduced gate length variation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 31, 2018
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Date of Patent
December 3, 2019
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Patent Application Number
15994720
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Patent Citations
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US Patent 10217846 Vertical field effect transistor formation with critical dimension control
Patent Citations Received
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US Patent 11961800 Via for semiconductor device connection and methods of forming the same
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US Patent 10923356 Gas phase etch with controllable etch selectivity of silicon-germanium alloys
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US Patent 11251071 Raised via for terminal connections on different planes
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US Patent 11646220 Raised via for terminal connections on different planes
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US Patent 11444020 Via for semiconductor device connection and methods of forming the same
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US Patent 11855246 Semiconductor device and method
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US Patent 11502184 Semiconductor device with spacer of gradually changed thickness and manufacturing method thereof, and electronic device including the semiconductor device
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Patent Inventor Names
Peng Xu
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Choonghyun Lee
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Juntao Li
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Kangguo Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10497796
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Patent Primary Examiner
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Zandra V. Smith
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