Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hidemi Suemori0
Hiroo Sekiguchi0
Takashi Yoshida0
Date of Patent
February 11, 2020
Patent Application Number
16200100
Date Filed
November 26, 2018
Patent Citations
Patent Primary Examiner
Patent abstract
A method of forming a nitrogen-incorporated silicon or metal oxide film, includes (i) depositing by a plasma a silicon or metal oxide film on a substrate using a precursor containing a silicon or metal and an oxidizing gas, said plasma having a first plasma density; and (ii) nitriding by a plasma the silicon or metal oxide film using a nitriding gas without using any precursor, said plasma having a second plasma density which is higher than the first plasma density.
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