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US Patent 10559458 Method of forming oxynitride film

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
November 26, 2018
Date of Patent
February 11, 2020
Patent Application Number
16200100
Patent Citations
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US Patent 10290508 Method for forming vertical spacers for spacer-defined patterning
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US Patent 10319588 Method for depositing a metal chalcogenide on a substrate by cyclical deposition
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US Patent 10322384 Counter flow mixer for process chamber
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US Patent 10340125 Pulsed remote plasma method and system
0
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US Patent 10340135 Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
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US Patent 10343920 Aligned carbon nanotubes
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US Patent 10361201 Semiconductor structure and device formed using selective epitaxial process
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US Patent 10032628 Source/drain performance through conformal solid state doping
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US Patent 10018920 Lithography patterning with a gas phase resist
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US Patent 10023960 Process gas management for an inductively-coupled plasma deposition reactor
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•••
Patent Inventor Names
Hidemi Suemori
0
Hiroo Sekiguchi
0
Takashi Yoshida
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10559458
Patent Primary Examiner
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Selim U Ahmed

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