US Patent 10573808 Phase change memory with a dielectric bi-layer
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Patent abstract
Techniques regarding protecting a dielectric material during additive patterning of one or more phase change memories are provided. For example, one or more embodiments described herein can comprise a method, which can comprise forming a bi-layer adjacent a phase change memory element. The bi-layer can comprise a dielectric material and a capping material that can protect a thickness of the dielectric material during a patterning process.
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Patent Number
105738080
Date of Patent
February 25, 2020
0Patent Application Number
161073230
Date Filed
August 21, 2018
0Patent Primary Examiner
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Patent Jurisdiction
Patent Number
105738080
Date of Patent
February 25, 2020
0Patent Application Number
161073230
Date Filed
August 21, 2018
0Patent Primary Examiner
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US Patent 10573808 Phase change memory with a dielectric bi-layer
Infobox
Is a
Patent jurisdiction
Patent number
10573808
Date of patent
February 25, 2020
Patent application number
16107323
Date Filed
August 21, 2018
Patent primary examiner
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