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US Patent 10796912 Eliminating yield impact of stochastics in lithography

Patent 10796912 was granted and assigned to Lam Research on October, 2020 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Lam Research
Lam Research
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Date Filed
May 14, 2018
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Date of Patent
October 6, 2020
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Patent Applicant
Lam Research
Lam Research
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Patent Application Number
15979340
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Patent Citations
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US Patent 10566213 Atomic layer etching of tantalum
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US Patent 10269566 Etching substrates using ale and selective deposition
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US Patent 10494715 Atomic layer clean for removal of photoresist patterning scum
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US Patent 10514598 Vacuum-integrated hardmask processes and apparatus
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US Patent 10566212 Designer atomic layer etching
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US Patent 10685836 Etching substrates using ALE and selective deposition
Patent Citations Received
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US Patent 12125711 Reducing roughness of extreme ultraviolet lithography resists
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US Patent 11988965 Underlayer for photoresist adhesion and dose reduction
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US Patent 12062538 Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
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US Patent 12105422 Photoresist development with halide chemistries
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US Patent 11257674 Eliminating yield impact of stochastics in lithography
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US Patent 11921427 Methods for making hard masks useful in next-generation lithography
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10796912
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Patent Primary Examiner
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Charles D. Garber
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