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US Patent 10804099 Selective inhibition in atomic layer deposition of silicon-containing films

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Edits on 21 Jul, 2023
"Remove website redirecting to Patent Public Search front page"
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Golden AI
edited on 21 Jul, 2023
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=1080409900
Edits on 26 Apr, 2023
"Entity importer update"
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Golden AI
edited on 26 Apr, 2023
Infobox
Is a
Patent
Patent
0
Patent Applicant
Lam Research
Lam Research
0
Current Assignee
Lam Research
Lam Research
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
108040990
Date of Patent
October 13, 2020
0
Patent Application Number
158477440
Date Filed
December 19, 2017
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=108040990
Patent Citations
‌
US Patent 10008428 Methods for depositing films on sensitive substrates
0
‌
US Patent 10037884 Selective atomic layer deposition for gapfill using sacrificial underlayer
0
‌
US Patent 10043655 Plasma activated conformal dielectric film deposition
0
‌
US Patent 10043657 Plasma assisted atomic layer deposition metal oxide for patterning applications
0
‌
US Patent 10062563 Selective atomic layer deposition with post-dose treatment
0
‌
US Patent 10074543 High dry etch rate materials for semiconductor patterning applications
0
‌
US Patent 10134579 Method for high modulus ALD SiO2 spacer
0
‌
US Patent 10141505 Bromine containing silicon precursors for encapsulation layers
0
‌
US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
0
‌
US Patent 10373806 Apparatus and method for deposition and etch in gap fill
0
‌
US Patent 10361076 Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
0
‌
US Patent 10454029 Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
0
Patent Citations Received
‌
US Patent 10957514 Apparatus and method for deposition and etch in gap fill
0
‌
US Patent 11404275 Selective deposition using hydrolysis
0
‌
US Patent 11521849 In-situ deposition process
0
Patent Primary Examiner
‌
Yuechuan Yu
0
Edits on 25 Apr, 2023
"update citations for inverse infoboxes"
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Golden AI
edited on 25 Apr, 2023
Edits on 2 Apr, 2023
"update citations for inverse infoboxes"
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edited on 2 Apr, 2023
"update citations for inverse infoboxes"
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Golden AI
edited on 2 Apr, 2023
Edits on 30 Mar, 2023
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edited on 30 Mar, 2023
Edits on 28 Mar, 2023
"update citations for inverse infoboxes"
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Golden AI
edited on 28 Mar, 2023
Edits on 27 Mar, 2023
"update citations for inverse infoboxes"
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Golden AI
edited on 27 Mar, 2023
Edits on 24 Mar, 2023
"update citations for inverse infoboxes"
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Golden AI
edited on 24 Mar, 2023
"update citations for inverse infoboxes"
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edited on 24 Mar, 2023
Edits on 23 Mar, 2023
"update citations for inverse infoboxes"
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Golden AI
edited on 23 Mar, 2023
Edits on 7 Dec, 2022
"update inverses"
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Golden AI
edited on 7 Dec, 2022
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
‌
US Patent 11521849 In-situ deposition process
0
Edits on 28 Sep, 2022
"update citations for inverse infoboxes"
Golden AI profile picture
Golden AI
edited on 28 Sep, 2022
Edits on 26 Sep, 2022
"update citations for inverse infoboxes"
Golden AI profile picture
Golden AI
edited on 26 Sep, 2022
"update citations for inverse infoboxes"
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Golden AI
edited on 26 Sep, 2022
"update citations for inverse infoboxes"
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Golden AI
edited on 26 Sep, 2022
"update citations for inverse infoboxes"
Golden AI profile picture
Golden AI
edited on 26 Sep, 2022
"Entity importer update"
Golden AI profile picture
Golden AI
edited on 26 Sep, 2022
Infobox
Is a
Patent
Patent
0
Patent Applicant
Lam Research
Lam Research
0
Current Assignee
Lam Research
Lam Research
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
108040990
Date of Patent
October 13, 2020
0
Patent Application Number
158477440
Date Filed
December 19, 2017
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=108040990
Patent Citations
‌
US Patent 10008428 Methods for depositing films on sensitive substrates
0
‌
US Patent 10037884 Selective atomic layer deposition for gapfill using sacrificial underlayer
0
‌
US Patent 10043655 Plasma activated conformal dielectric film deposition
0
‌
US Patent 10043657 Plasma assisted atomic layer deposition metal oxide for patterning applications
0
‌
US Patent 10062563 Selective atomic layer deposition with post-dose treatment
0
‌
US Patent 10074543 High dry etch rate materials for semiconductor patterning applications
0
‌
US Patent 10134579 Method for high modulus ALD SiO2 spacer
0
‌
US Patent 10141505 Bromine containing silicon precursors for encapsulation layers
0
‌
US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
0
‌
US Patent 10373806 Apparatus and method for deposition and etch in gap fill
0
‌
US Patent 10361076 Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
0
‌
US Patent 10454029 Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
0
Patent Citations Received
‌
US Patent 10957514 Apparatus and method for deposition and etch in gap fill
0
‌
US Patent 11404275 Selective deposition using hydrolysis
0
Patent Primary Examiner
‌
Yuechuan Yu
0
"update citations for inverse infoboxes"
Golden AI profile picture
Golden AI
edited on 26 Sep, 2022
Edits on 25 Sep, 2022
"update citations for inverse infoboxes"
Golden AI profile picture
Golden AI
edited on 25 Sep, 2022

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