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US Patent 10818556 Method for forming a semiconductor structure
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Edits on 20 May, 2023
"Remove website redirecting to Patent Public Search front page"
Golden AI
edited on 20 May, 2023
Edits made to:
Infobox
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-1
properties)
Infobox
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10818556
0
0
Edits on 28 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 28 Apr, 2023
Infobox
Patent Citations
US Patent 10522409 Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
0
Edits on 26 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 26 Apr, 2023
Infobox
Patent Citations
US Patent 10361125 Methods and structures for forming uniform fins when using hardmask patterns
0
"Entity importer update"
Golden AI
edited on 26 Apr, 2023
Infobox
Is a
Patent
0
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
United States Patent and Trademark Office
0
Patent Number
10818556
0
Date of Patent
October 27, 2020
0
Patent Application Number
16223036
0
Date Filed
December 17, 2018
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10818556
0
Patent Citations
US Patent 10170591 Self-aligned finFET formation
0
US Patent 10312346 Vertical transistor with variable gate length
0
US Patent 10276443 Insulating layer next to fin structure and method of removing fin structure
0
US Patent 10355110 FinFET and method of forming same
0
US Patent 10361125 Methods and structures for forming uniform fins when using hardmask patterns
0
US Patent 10431660 Self-limiting fin spike removal
0
US Patent 10475886 Modified fin cut after epitaxial growth
0
US Patent 10522409 Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
0
US Patent 10586713 Semiconductor device and fabrication method thereof
0
US Patent 10586859 Semiconductor device and fabrication method thereof
0
US Patent 10615255 Fin formation for semiconductor device
0
Patent Primary Examiner
Mounir S Amer
0
Edits on 4 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 4 Apr, 2023
Infobox
Patent Citations
US Patent 10276443 Insulating layer next to fin structure and method of removing fin structure
0
Edits on 3 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 3 Apr, 2023
Infobox
Patent Citations
US Patent 10312346 Vertical transistor with variable gate length
0
Edits on 1 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 1 Apr, 2023
Infobox
Patent Citations
US Patent 10170591 Self-aligned finFET formation
0
Edits on 31 Mar, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 31 Mar, 2023
Infobox
Patent Citations
US Patent 10431660 Self-limiting fin spike removal
0
Edits on 23 Mar, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 23 Mar, 2023
Infobox
Patent Citations
US Patent 10355110 FinFET and method of forming same
0
Edits on 22 Mar, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 22 Mar, 2023
Infobox
Patent Citations
US Patent 10586713 Semiconductor device and fabrication method thereof
0
Edits on 28 Sep, 2022
"update citations for inverse infoboxes"
Golden AI
edited on 28 Sep, 2022
Infobox
Patent Citations
US Patent 10170591 Self-aligned finFET formation
0
Edits on 27 Sep, 2022
"update citations for inverse infoboxes"
Golden AI
edited on 27 Sep, 2022
Infobox
Patent Citations
US Patent 10615255 Fin formation for semiconductor device
0
"update citations for inverse infoboxes"
Golden AI
edited on 27 Sep, 2022
Infobox
Patent Citations
US Patent 10586713 Semiconductor device and fabrication method thereof
0
"update citations for inverse infoboxes"
Golden AI
edited on 27 Sep, 2022
Infobox
Patent Citations
US Patent 10431660 Self-limiting fin spike removal
0
Edits on 23 Sep, 2022
"Entity importer update"
Golden AI
edited on 23 Sep, 2022
Infobox
Is a
Patent
0
Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
United States Patent and Trademark Office
0
Patent Number
10818556
0
Date of Patent
October 27, 2020
0
Patent Application Number
16223036
0
Date Filed
December 17, 2018
0
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10818556
0
Patent Citations
US Patent 10170591 Self-aligned finFET formation
0
US Patent 10312346 Vertical transistor with variable gate length
0
US Patent 10276443 Insulating layer next to fin structure and method of removing fin structure
0
US Patent 10355110 FinFET and method of forming same
0
US Patent 10361125 Methods and structures for forming uniform fins when using hardmask patterns
0
US Patent 10431660 Self-limiting fin spike removal
0
US Patent 10475886 Modified fin cut after epitaxial growth
0
US Patent 10522409 Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
0
US Patent 10586713 Semiconductor device and fabrication method thereof
0
US Patent 10586859 Semiconductor device and fabrication method thereof
0
US Patent 10615255 Fin formation for semiconductor device
0
Patent Primary Examiner
Mounir S Amer
0
Edits on 17 Jun, 2022
"Entity importer update"
Golden AI
edited on 17 Jun, 2022
Edits made to:
Infobox
(
+1
properties)
Infobox
Website URL
https://pdfpiw.uspto.gov/.piw?Docid=10818556
Edits on 7 Feb, 2022
"Created via: Entity Importer"
Golden AI
created this topic on 7 Feb, 2022
Edits made to:
Infobox
(
+20
properties)
US Patent 10818556 Method for forming a semiconductor structure
Infobox
Is a
Patent
Patent applicant
Current assignee
Patent jurisdiction
United States Patent and Trademark Office
Patent number
10818556
Date of patent
October 27, 2020
Patent application number
16223036
Date Filed
December 17, 2018
Patent citations
US Patent 10170591 Self-aligned finFET formation
US Patent 10312346 Vertical transistor with variable gate length
US Patent 10276443 Insulating layer next to fin structure and method of removing fin structure
US Patent 10355110 FinFET and method of forming same
US Patent 10361125 Methods and structures for forming uniform fins when using hardmask patterns
US Patent 10431660 Self-limiting fin spike removal
US Patent 10475886 Modified fin cut after epitaxial growth
US Patent 10522409 Fin field effect transistor (FinFET) device structure with dummy fin structure and method for forming the same
US Patent 10586713 Semiconductor device and fabrication method thereof
US Patent 10586859 Semiconductor device and fabrication method thereof
US Patent 10615255 Fin formation for semiconductor device
Patent primary examiner
Mounir S Amer
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