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US Patent 10832904 Remote plasma based deposition of oxygen doped silicon carbide films

Patent 10832904 was granted and assigned to Lam Research on November, 2020 by the United States Patent and Trademark Office.

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Patent attributes

Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Date of Patent

November 10, 2020

Patent Application Number

15696045

Date Filed

September 5, 2017

Patent Citations

US Patent 10472714 Method to obtain SiC class of films of desired composition and film properties

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US Patent 10325773 Conformal deposition of silicon carbide films

US Patent 10580690 Staircase encapsulation in 3D NAND fabrication

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US Patent 10002787 Staircase encapsulation in 3D NAND fabrication

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US Patent 10211310 Remote plasma based deposition of SiOC class of films

US Patent 10297442 Remote plasma based deposition of graded or multi-layered silicon carbide film

Patent Citations Received

US Patent 11894227 Conformal deposition of silicon carbide films

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US Patent 11680314 Films of desired composition and film properties

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US Patent 11680315 Films of desired composition and film properties

0

US Patent 11708634 Films of desired composition and film properties

0

US Patent 11264234 Conformal deposition of silicon carbide films

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Patent Primary Examiner

Brigitte A Paterson

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