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US Patent 10930765 Method of manufacturing FinFET device with non-recessed STI

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
March 31, 2020
Date of Patent
February 23, 2021
Patent Application Number
16836860
Patent Citations
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US Patent 10388652 Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same
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US Patent 10431498 Semiconductor devices and fabrication methods thereof
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US Patent 10483263 Semiconductor device and manufacturing method therefor
0
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US Patent 10490458 Methods of cutting metal gates and structures formed thereof
0
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US Patent 10522414 Method and structure for FinFET isolation
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US Patent 10685889 Semiconductor structures and fabrication methods thereof
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US Patent 10607882 Semiconductor device and method for fabricating the same
0
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US Patent 10741654 Semiconductor device and forming method thereof
0
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US Patent 10074571 Device with decreased pitch contact to active regions
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US Patent 10163904 Semiconductor device structure
Patent Inventor Names
Fei Zhou
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10930765
Patent Primary Examiner
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Victoria K. Hall

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