US Patent 10950506 Forming single and double diffusion breaks

Fabrication methods and resulting structures for single and double diffusion breaks are provided. Aspects include forming one or more fins on a substrate, the substrate including a first region and a second region, forming a plurality of sacrificial gate structures over channel regions associated with the one or more fins, forming a single diffusion break cavity in the first region of the substrate, forming a double diffusion break cavity in the second region of the substrate, depositing a first dielectric material in the single diffusion break cavity, and depositing a second dielectric material in the double diffusion break cavity.