US Patent 11309383 Quad-layer high-k for metal-insulator-metal capacitors
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Patent Number
113093830
Date of Patent
April 19, 2022
0Patent Application Number
171220040
Date Filed
December 15, 2020
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113093830
Date of Patent
April 19, 2022
0Patent Application Number
171220040
Date Filed
December 15, 2020
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US Patent 11309383 Quad-layer high-k for metal-insulator-metal capacitors
Article
A semiconductor structure, and a method of making the same includes a multiple electrode stacked capacitor containing a sequence of first metal layers interleaved with second metal layers. A quad-layer stack separates each of the first metal layers from each of the second metal layers, the quad-layer dielectric stack includes a first dielectric layer made of Al
Infobox
Is a
Patent jurisdiction
Patent number
11309383
Date of patent
April 19, 2022
Patent application number
17122004
Date Filed
December 15, 2020
Patent primary examiner
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