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US Patent 11362276 High thermal stability SiO

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Edits on 16 Oct, 2023
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Infobox (+2 properties)
Infobox
Patent Inventor Names
Hsiang-Lan Lung0
Huai-Yu Cheng0
Edits on 25 Apr, 2023
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
113622760
Date of Patent
June 14, 2022
0
Patent Application Number
168333490
Date Filed
March 27, 2020
0
Patent Citations
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US Patent 10050196 Dielectric doped, Sb-rich GST phase change memory
0
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US Patent 10157671 Fast switching 3D cross-point array
0
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US Patent 10256406 Semiconductor structures including liners and related methods
0
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US Patent 10374009 Te-free AsSeGe chalcogenides for selector devices and memory devices using same
0
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US Patent 10541271 Superlattice-like switching devices
0
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US Patent 10593875 Self-aligned 3D memory with confined cell
0
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US Patent 10978511 Semiconductor device and memory cell
0
Patent Primary Examiner
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Laura M Menz
0
CPC Code
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G11C 2213/34
0
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G11C 2213/33
0
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G11C 2213/31
0
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G11C 13/0002
0
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G11C 13/0007
0
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G11C 13/0004
0
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G11C 11/5678
0
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H01L 45/145
0
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H01L 45/147
0
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H01L 45/144
0
Edits on 28 Sep, 2022
"update citations for inverse infoboxes"
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edited on 28 Sep, 2022
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Edits on 24 Sep, 2022
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edited on 24 Sep, 2022
Edits on 15 Jun, 2022
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created this topic on 15 Jun, 2022
Edits made to:
Infobox (+24 properties)
Article (+43 characters)
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 US Patent 11362276 High thermal stability SiO

Article

A phase-change material having specific SiO

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
11362276
Date of patent
June 14, 2022
Patent application number
16833349
Date Filed
March 27, 2020
Patent citations
‌
US Patent 10050196 Dielectric doped, Sb-rich GST phase change memory
‌
US Patent 10157671 Fast switching 3D cross-point array
‌
US Patent 10256406 Semiconductor structures including liners and related methods
‌
US Patent 10374009 Te-free AsSeGe chalcogenides for selector devices and memory devices using same
‌
US Patent 10541271 Superlattice-like switching devices
‌
US Patent 10593875 Self-aligned 3D memory with confined cell
‌
US Patent 10978511 Semiconductor device and memory cell
Patent primary examiner
‌
Laura M Menz
CPC Code
‌
G11C 2213/34
‌
G11C 2213/33
‌
G11C 2213/31
‌
G11C 13/0002
‌
G11C 13/0007
‌
G11C 13/0004
‌
G11C 11/5678
‌
H01L 45/145
‌
H01L 45/147
‌
H01L 45/144

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