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US Patent 11362276 High thermal stability SiO

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
March 27, 2020
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Date of Patent
June 14, 2022
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Patent Application Number
16833349
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Patent Citations
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US Patent 10050196 Dielectric doped, Sb-rich GST phase change memory
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US Patent 10157671 Fast switching 3D cross-point array
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US Patent 10374009 Te-free AsSeGe chalcogenides for selector devices and memory devices using same
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US Patent 10256406 Semiconductor structures including liners and related methods
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US Patent 10541271 Superlattice-like switching devices
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US Patent 10978511 Semiconductor device and memory cell
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US Patent 10593875 Self-aligned 3D memory with confined cell
Patent Inventor Names
Hsiang-Lan Lung
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Huai-Yu Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11362276
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Patent Primary Examiner
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Laura M Menz
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CPC Code
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H01L 45/145
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H01L 45/147
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G11C 11/5678
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G11C 13/0002
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G11C 13/0004
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G11C 13/0007
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G11C 2213/31
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G11C 2213/33
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G11C 2213/34
0
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H01L 45/144
0

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