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US Patent 11368016 ESD protection for integrated circuit devices
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Patent
Date Filed
September 24, 2020
Date of Patent
June 21, 2022
Patent Application Number
17030679
Patent Citations
US Patent 10692866 Co-integrated channel and gate formation scheme for nanosheet transistors having separately tuned threshold voltages
US Patent 10672868 Methods of forming self aligned spacers for nanowire device structures
US Patent 10679906 Method of forming nanosheet transistor structures with reduced parasitic capacitance and improved junction sharpness
US Patent 10680107 Nanosheet transistor with stable structure
US Patent 10692873 Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions
US Patent 10692985 Protection of high-K dielectric during reliability anneal on nanosheet structures
US Patent 10714391 Method for controlling transistor delay of nanowire or nanosheet transistor devices
US Patent 10727315 Nanosheet transistor
US Patent 10734273 Semiconductor device including isolation layers and method of manufacturing the same
US Patent 10734286 Multiple dielectrics for gate-all-around transistors
•••
Patent Citations Received
US Patent 11955171 Integrated circuit device including an SRAM portion having end power select circuits
0
US Patent 11569222 Low-voltage electrostatic discharge (ESD) protection circuit, integrated circuit and method for ESD protection thereof
US Patent 12119641 ESD protection for integrated circuit devices
0
US Patent 11972793 Integrated circuit device including an SRAM portion having end power select circuits
0
US Patent 11973342 ESD protection for integrated circuit devices
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11368016
Patent Primary Examiner
Dharti H Patel
CPC Code
H01L 27/0266
H02H 9/046
H01L 27/0262
H01L 27/0255
H01L 27/0292
H01L 27/0288
H01L 27/0296
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