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US Patent 11404275 Selective deposition using hydrolysis

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Current Assignee
Lam Research
Lam Research
Date Filed
March 1, 2019
Date of Patent
August 2, 2022
Patent Applicant
Lam Research
Lam Research
Patent Application Number
16977438
Patent Citations
‌
US Patent 10176984 Selective deposition of silicon oxide
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US Patent 10199212 Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide
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US Patent 10242866 Selective deposition of silicon nitride on silicon oxide using catalytic control
‌
US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
‌
US Patent 10454029 Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
‌
US Patent 10460930 Selective growth of SiO2 on dielectric surfaces in the presence of copper
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US Patent 10490413 Selective growth of silicon nitride
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US Patent 10559461 Selective deposition with atomic layer etch reset
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US Patent 10629429 Selective deposition of silicon oxide
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US Patent 10629435 Doped ALD films for semiconductor patterning applications
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11404275
Patent Primary Examiner
‌
Erik Kielin

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