Patent attributes
The substrate processing method includes alternately performing a plurality of times of a metal oxide layer forming process in which an oxidation fluid is supplied to a surface of the substrate and a metal oxide layer composed of a one-atom layer or a several-atom layer is formed on a surface layer of the metal layer; and a metal oxide layer removal process in which an etching solution is supplied to the surface of the substrate and the metal oxide layer is removed from the surface of the substrate. A final dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the surface of the substrate in a final metal oxide layer removal process is lower than an initial dissolved oxygen concentration which is a dissolved oxygen concentration in the etching solution supplied to the substrate in an initial metal oxide layer removal process.
