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US Patent 11101129 Ultrathin atomic layer deposition film accuracy thickness control

Patent 11101129 was granted and assigned to Lam Research on August, 2021 by the United States Patent and Trademark Office.

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Patent abstract

Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.

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