US Patent 11101129 Ultrathin atomic layer deposition film accuracy thickness control
Patent 11101129 was granted and assigned to Lam Research on August, 2021 by the United States Patent and Trademark Office.
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Patent abstract
Methods for depositing films by atomic layer deposition using cyclic siloxane precursors are provided. Methods involve exposing the substrate to a cyclic siloxane precursor during operation of an atomic layer deposition cycle to form silicon oxide.
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Patent Inventor Names
Adrien LaVoie0
Hu Kang0
Jun Qian0
Purushottam Kumar0
Seiji Matsuyama0
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Official Website
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Patent Citations Received
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Patent Jurisdiction
Patent Number
111011290
Date of Patent
August 24, 2021
0Patent Application Number
201906280
Date Filed
June 28, 2019
0Official Website
Patent Citations Received
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Patent citations received
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US Patent 11101129 Ultrathin atomic layer deposition film accuracy thickness control
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
11101129
Date of patent
August 24, 2021
Patent application number
20190628
Date Filed
June 28, 2019
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