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US Patent 11410853 Substrate processing method and substrate processing device
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Patent
Date Filed
March 6, 2020
Date of Patent
August 9, 2022
Patent Application Number
16810850
Patent Citations
US Patent 10068764 Selective metal oxide deposition using a self-assembled monolayer surface pretreatment
US Patent 10431458 Mask shrink layer for high aspect ratio dielectric etch
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US Patent 10256108 Atomic layer etching of AL
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US Patent 10566187 Ultrathin atomic layer deposition film accuracy thickness control
US Patent 11101129 Ultrathin atomic layer deposition film accuracy thickness control
0
US Patent 10784118 Atomic layer etching using a combination of plasma and vapor treatments
Patent Inventor Names
Ayumi Higuchi
0
Yuya Akanishi
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11410853
Patent Primary Examiner
Duy-Vu N Deo
CPC Code
H01L 21/30604
H01L 21/67253
H01L 21/67023
H01L 21/67086
H01L 21/6708
H01L 21/67028
H01L 21/67138
H01L 21/76892
H01L 21/67017
H01L 21/32134
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