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US Patent 11450673 Connection between source/drain and gate
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Patent
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Date Filed
July 31, 2020
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Date of Patent
September 20, 2022
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Patent Application Number
16945146
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Patent Citations
US Patent 10157799 Multi-gate device and method of fabrication thereof
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US Patent 10199502 Structure of S/D contact and method of making same
US Patent 10475902 Spacers for nanowire-based integrated circuit device and method of fabricating same
US Patent 10290546 Threshold voltage adjustment for a gate-all-around semiconductor structure
US Patent 10840146 Structures and SRAM bit cells with a buried cross-couple interconnect
US Patent 10032627 Method for forming stacked nanowire transistors
US Patent 10109721 Horizontal gate-all-around device having wrapped-around source and drain
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11450673
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Patent Primary Examiner
Brian Turner
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CPC Code
H01L 23/535
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H01L 29/16
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H01L 29/78684
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H01L 29/66772
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H01L 29/42392
0
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