US Patent 11532717 Forming metal contacts on metal gates

A semiconductor structure includes a metal gate structure comprising a gate dielectric layer and a gate electrode, a conductive layer disposed over the metal gate structure, and a contact feature in direct contact with the top portion of the conductive layer, where the conductive layer includes a bottom portion disposed below a top surface of the metal gate structure and a top portion disposed over the top surface of the metal gate structure, and where the top portion laterally extends beyond a sidewall of the bottom portion.