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US Patent 11551750 Enhanced state dual memory cell
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Patent
Date Filed
December 11, 2020
Date of Patent
January 10, 2023
Patent Application Number
17118952
Patent Citations
US Patent 10374039 Enhanced field bipolar resistive RAM integrated with FDSOI technology
US Patent 10269869 High-density field-enhanced ReRAM integrated with vertical transistors
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11551750
Patent Primary Examiner
Hien N Nguyen
CPC Code
G11C 11/1673
G11C 11/1675
G11C 13/004
G11C 13/0069
G11C 13/0097
G11C 11/1659
G11C 2213/79
G11C 2213/82
G11C 11/5678
G11C 13/003
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