US Patent 11552178 Metal gate structures for field effect transistors
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Patent Number
115521780
Date of Patent
January 10, 2023
0Patent Application Number
170631770
Date Filed
October 5, 2020
0Patent Citations
Patent Primary Examiner
CPC Code
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US Patent 11552178 Metal gate structures for field effect transistors
Article
The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.
Infobox
Is a
Patent Jurisdiction
Patent Number
115521780
Date of Patent
January 10, 2023
0Patent Application Number
170631770
Date Filed
October 5, 2020
0Patent Citations
Patent Primary Examiner
CPC Code
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