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US Patent 11587796 3D-NAND memory cell structure

Patent 11587796 was granted and assigned to Applied Materials on February, 2023 by the United States Patent and Trademark Office.

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Patent Citations
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US Patent 11049880 Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
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 US Patent 11587796 3D-NAND memory cell structure

Article

Memory devices and methods of manufacturing memory devices are provided. The device and methods described suppress oxidation of metal layers exposed to ambient oxygen. After an opening is formed, a nitridation process occurs to nitridate the surface of the exposed metal layer inside the opening. The nitridated region formed on the surface of metal layer inside the opening works as a barrier layer for oxygen diffusion. In addition, the nitridated region works as an electrode for charge trap memory cells.

Infobox
Is a
Patent
Patent
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Patent Applicant
Applied Materials
Applied Materials
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Current Assignee
Applied Materials
Applied Materials
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
115877960
Date of Patent
February 21, 2023
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Patent Application Number
171475780
Date Filed
January 13, 2021
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Patent Citations
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US Patent 10043819 Method for manufacturing 3D NAND memory using gate replacement, and resulting structures
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US Patent 10319739 Accommodating imperfectly aligned memory holes
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US Patent 10325923 Accommodating imperfectly aligned memory holes
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US Patent 10354916 Methods for wordline separation in 3D-NAND devices
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US Patent 10410869 CVD based oxide-metal multi structure for 3D NAND memory devices
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US Patent 10468259 Charge-trap layer separation and word-line isolation in a 3-D NAND structure
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US Patent 10529737 Accommodating imperfectly aligned memory holes
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US Patent 10541246 3D flash memory cells which discourage cross-cell electrical tunneling
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US Patent 10553604 Through array contact structure of three-dimensional memory device
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US Patent 10622251 Methods for wordline separation in 3D-NAND devices
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US Patent 10790298 Methods and apparatus for three-dimensional NAND structure fabrication
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US Patent 10886172 Methods for wordline separation in 3D-NAND devices
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US Patent 10964717 Methods and apparatus for three-dimensional NAND structure fabrication
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US Patent 10998329 Methods and apparatus for three dimensional NAND structure fabrication
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US Patent 11024371 Method of programming memory device and related memory device
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US Patent 11049695 Metal contact landing structure
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US Patent 11049880 Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
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Patent Primary Examiner
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Karen Kusumakar
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CPC Code
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H01L 29/40117
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H01L 23/5226
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H01L 27/11582
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H01L 21/76877
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H01L 21/321
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