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US Patent 11652156 Nanosheet transistor with asymmetric gate stack

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
October 21, 2021
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Date of Patent
May 16, 2023
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Patent Application Number
17506742
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Patent Citations
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US Patent 10229983 Methods and structures for forming field-effect transistors (FETs) with low-k spacers
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US Patent 10170584 Nanosheet field effect transistors with partial inside spacers
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US Patent 10243061 Nanosheet transistor
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US Patent 10014390 Inner spacer formation for nanosheet field-effect transistors with tall suspensions
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US Patent 10134859 Transistor with asymmetric spacers
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Patent Inventor Names
Dechao Guo
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Tsung-Sheng Kang
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Tao Li
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Ruilong Xie
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Kangguo Cheng
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Juntao Li
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Carl Radens
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11652156
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Patent Primary Examiner
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Karen Kusumakar
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CPC Code
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H01L 29/4238
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H01L 29/42392
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H01L 29/66439
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H01L 29/78696
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H01L 29/775
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H01L 29/0673
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H01L 21/823475
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H01L 21/823437
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H01L 29/785
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H01L 29/66553
0
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