Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 23, 2023
0Patent Application Number
173155950
Date Filed
May 10, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The method includes exposing a portion of the resist layer. The resist layer includes a photoacid generator (PAG) group, a quencher group, an acid-labile group (ALG) and a polar unit (PU). The method also includes performing a baking process on the resist layer and developing the resist layer to form a patterned resist layer. The method further includes doping a portion of the material layer by using the patterned resist layer as a mask to form a doped region. In addition, the method includes removing the patterned resist layer.
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