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US Patent 11656553 Method for forming semiconductor structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
May 10, 2021
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Date of Patent
May 23, 2023
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17315595
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Patent Citations
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US Patent 9184054 Method for integrated circuit patterning
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9256123 Method of making an extreme ultraviolet pellicle
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US Patent 8323870 Method and photoresist with zipper mechanism
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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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US Patent 8828625 Extreme ultraviolet lithography mask and multilayer deposition method for fabricating same
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US Patent 8841047 Extreme ultraviolet lithography process and mask
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US Patent 9093530 Fin structure of FinFET
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11656553
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Patent Primary Examiner
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Bilkis Jahan
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CPC Code
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G03F 7/0045
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G03F 7/0397
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G03F 7/094
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H01L 21/0273
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