Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 30, 2023
0Patent Application Number
173163250
Date Filed
May 10, 2021
0Patent Citations
Patent Primary Examiner
A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor fin structure over a substrate, forming a dielectric fin structure laterally spaced apart from the semiconductor fin structure, forming a source/drain spacer between the semiconductor fin structure and the dielectric fin structure, etching an upper portion of the semiconductor fin structure to expose a lower portion of the semiconductor fin structure, and forming a source/drain feature over the lower portion of the semiconductor fin structure. The source/drain spacer is interposed between the source/drain feature and the dielectric fin structure.
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