Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 4, 2023
0Patent Application Number
170723670
Date Filed
October 16, 2020
0Patent Citations
Patent Primary Examiner
A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising: a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
