US Patent 11695073 Memory array gate structures
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US Patent 11695073 Memory array gate structures
Article
A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising: a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line.
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Is a
Patent Jurisdiction
Patent Number
116950730
Date of Patent
July 4, 2023
0Patent Application Number
170723670
Date Filed
October 16, 2020
0Patent Citations
Patent Primary Examiner
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