US Patent 11704469 Integrated circuit and method of forming the same

An integrated circuit includes a first set of devices, a set of metal layers and a header circuit. The first set of devices are configured to operate on a first supply voltage, and are located on a first layer of the integrated circuit. The set of metal layers are above the first layer, and includes a first metal layer and a second metal layer. The first metal layer extends in at least a first direction and a second direction. The header circuit is above the first set of devices. At least a portion of the header circuit is positioned between the first metal layer and the second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices, and is configured to be coupled to a first voltage supply having the first supply voltage.