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US Patent 11710737 Hybrid semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Date Filed
April 9, 2021
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Date of Patent
July 25, 2023
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17226851
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Patent Citations
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US Patent 10109721 Horizontal gate-all-around device having wrapped-around source and drain
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US Patent 10157799 Multi-gate device and method of fabrication thereof
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US Patent 10170484 Integrated circuit structure incorporating multiple gate-all-around field effect transistors having different drive currents and method
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US Patent 10199502 Structure of S/D contact and method of making same
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US Patent 10475902 Spacers for nanowire-based integrated circuit device and method of fabricating same
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US Patent 10290546 Threshold voltage adjustment for a gate-all-around semiconductor structure
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US Patent 9818872 Multi-gate device and method of fabrication thereof
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US Patent 9887269 Multi-gate device and method of fabrication thereof
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US Patent 9899398 Non-volatile memory device having nanocrystal floating gate and method of fabricating same
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US Patent 10032627 Method for forming stacked nanowire transistors
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11710737
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Patent Primary Examiner
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Changhyun Yi
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CPC Code
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H01L 29/78696
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H01L 27/0886
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H01L 29/42392
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H01L 29/0653
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H01L 29/0673
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