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US Patent 11715766 Stacked high barrier III-V power semiconductor diode
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Patent
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Date Filed
December 22, 2021
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Date of Patent
August 1, 2023
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Patent Application Number
17559656
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Patent Citations
US Patent 10340394 III-V semiconductor diode
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US Patent 10293124 Respiration system and respiration apparatus and method
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US Patent 10312381 III-V semiconductor diode
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US Patent 9305772 Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
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US Patent 10074540 III-V semiconductor diode
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US Patent 10192745 Method for manufacturing a layer stack from a p+-substrate, a p−-layer, an n−-layer and a third layer
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11715766
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Patent Primary Examiner
Shahed Ahmed
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CPC Code
H01L 29/0619
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H01L 29/205
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H01L 29/861
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H01L 29/267
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H01L 29/04
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H01L 29/0684
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H01L 29/868
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H01L 29/8611
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H01L 29/20
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H01L 29/66204
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