Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 1, 2023
0Patent Application Number
171367350
Date Filed
December 29, 2020
0Patent Citations
...
Patent Primary Examiner
In accordance with an embodiment of the present invention, a method and semiconductor device is described, including forming a plurality of gaps of variable size between device features, each of the gaps including vertical sidewalls perpendicular to a substrate surface and a horizontal surface parallel to the substrate surface. Spacer material is directionally deposited concurrently on the horizontal surface in each gap and in a flat area using a total flow rate of gaseous precursors that minimizes gap-loading in a smallest gap compared to the flat area such that the spacer material is deposited on the substrate surface in each gap and in the flat area to a uniform thickness.
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