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US Patent 11715931 Strained and strain control regions in optical devices

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 US Patent 11715931 Strained and strain control regions in optical devices

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An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
117159310
Date of Patent
August 1, 2023
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Patent Application Number
174953780
Date Filed
October 6, 2021
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Patent Citations
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US Patent 7128849 Phosphors containing boron and metals of Group IIIA and IIIB
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US Patent 7220324 Technique for the growth of planar semi-polar gallium nitride
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US Patent 7303630 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
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US Patent 7312156 Method and apparatus for supporting a semiconductor wafer during processing
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US Patent 7323723 Semiconductor light-emitting device using phosphors for performing wavelength conversion
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US Patent 7338828 Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
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US Patent 7358542 Red emitting phosphor materials for use in LED and LCD applications
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US Patent 7358543 Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device
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US Patent 7390359 Nitride semiconductor wafer
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US Patent 7470555 Semiconductor laser device, and method of manufacturing the same
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US Patent 7483466 Vertical cavity surface emitting laser device
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US Patent 7483468 Multiple wavelengths semiconductor laser device
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US Patent 7489441 Monocrystalline optical component with curved surface and multilayer coating
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US Patent 7491984 Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
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US Patent 7555025 Semiconductor laser device
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US Patent 7564387 Optical analog-to-digital converter
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US Patent 7598104 Method of forming a metal contact and passivation of a semiconductor feature
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US Patent 7691658 Method for improved growth of semipolar (Al,In,Ga,B)N
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US Patent 7709284 Method for deposition of magnesium doped (Al, In, Ga, B)N layers
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US Patent 7727332 Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
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US Patent 7733571 Phosphor screen and displays systems
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US Patent 7749326 Chemical vapor deposition apparatus
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US Patent 7806078 Plasma treatment apparatus
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US Patent 7858408 LED with phosphor tile and overmolded phosphor in lens
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US Patent 7862761 Pattern forming method and pattern forming apparatus
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US Patent 7923741 Semiconductor lighting device with reflective remote wavelength conversion
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US Patent 7939354 Method of fabricating nitride semiconductor laser
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US Patent 7968864 Group-III nitride light-emitting device
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US Patent 8017932 Light-emitting device
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US Patent 8044412 Package for a light emitting element
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US Patent 8124996 White light devices using non-polar or semipolar gallium containing materials and phosphors
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US Patent 8126024 Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater
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US Patent 8143148 Self-aligned multi-dielectric-layer lift off process for laser diode stripes
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US Patent 8211723 Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
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US Patent 8242522 Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
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US Patent 8247887 Method and surface morphology of non-polar gallium nitride containing substrates
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US Patent 8252662 Method and structure for manufacture of light emitting diode devices using bulk GaN
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US Patent 8254425 Optical device structure using GaN substrates and growth structures for laser applications
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US Patent 8259769 Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
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US Patent 8284810 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
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US Patent 8294179 Optical device structure using GaN substrates and growth structures for laser applications
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US Patent 8314429 Multi color active regions for white light emitting diode
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US Patent 8350273 Semiconductor structure and a method of forming the same
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US Patent 8351478 Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates
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US Patent 8355418 Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
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US Patent 8416825 Optical device structure using GaN substrates and growth structure for laser applications
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US Patent 8422525 Optical device structure using miscut GaN substrates for laser applications
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US Patent 8427590 Laser based display method and system
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US Patent 8451876 Method and system for providing bidirectional light sources with broad spectrum
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US Patent 8509275 Gallium nitride based laser dazzling device and method
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US Patent 8582038 Laser based display method and system
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US Patent 8634442 Optical device structure using GaN substrates for laser applications
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US Patent 8816319 Method of strain engineering and related optical device using a gallium and nitrogen containing active region
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US Patent 9071039 Optical device structure using GaN substrates for laser applications
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US Patent 9166374 Laser devices using a semipolar plane
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US Patent 9312444 Semiconductor light emitting device and manufacturing method thereof
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US Patent 9379522 Method of strain engineering and related optical device using a gallium and nitrogen containing active region
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US Patent 9570888 Method of strain engineering and related optical device using a gallium and nitrogen containing active region
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US Patent 9768346 Light-emitting device
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US Patent 10283938 Method of strain engineering and related optical device using a gallium and nitrogen containing active region
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US Patent 10566766 Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
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US Patent 10637210 Strained and strain control regions in optical devices
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US Patent 10879674 Laser devices using a semipolar plane
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US Patent 11070031 Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces
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US Patent 11387629 Intermediate ultraviolet laser diode device
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Patent Primary Examiner
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Laura M Menz
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CPC Code
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H01L 21/0254
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H01S 5/3403
0
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H01L 33/0075
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