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US Patent 11749738 Semiconductor device and manufacturing method thereof
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Patent
Date Filed
February 7, 2022
Date of Patent
September 5, 2023
Patent Application Number
17666347
Patent Citations
US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
US Patent 11245023 Semiconductor device and manufacturing method thereof
US Patent 9093530 Fin structure of FinFET
US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
US Patent 9209247 Self-aligned wrapped-around structure
US Patent 9214555 Barrier layer for FinFET channels
US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
US Patent 9412828 Aligned gate-all-around structure
US Patent 9472618 Nanowire field effect transistor device having a replacement gate
•••
Patent Citations Received
US Patent 12113116 Semiconductor device and manufacturing method thereof
0
Patent Inventor Names
Bo-Yu Yang
Juei-Nai Kwo
Hsien-Wen Wan
Yi-Ting Cheng
Yu-Jie Hong
Ming-Hwei Hong
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11749738
Patent Primary Examiner
Tong-Ho Kim
CPC Code
H01L 29/7851
H01L 29/78618
H01L 29/78684
H01L 29/78696
H01L 21/02532
H01L 21/02603
H01L 21/28255
H01L 29/0673
H01L 29/0847
H01L 29/16
•••
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