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US Patent 11756887 Backside floating metal for increased capacitance

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

June 22, 2021

Date of Patent

September 12, 2023

Patent Application Number

17354428

Patent Citations

US Patent 9455214 Wafer frontside-backside through silicon via

US Patent 9502350 Interconnect scaling method including forming dielectric layer over subtractively etched first conductive layer and forming second conductive material on dielectric layer

US Patent 10256186 Interconnect structure having subtractive etch feature and damascene feature

US Patent 10685168 Capacitance extraction for floating metal in integrated circuit

US Patent 10636739 Integrated circuit chip with power delivery network on the backside of the chip

US Patent 10878162 Metal with buried power for increased IC device density

US Patent 8552563 Three-dimensional semiconductor architecture

US Patent 9331062 Integrated circuits with backside power delivery

Patent Inventor Names

Nicholas Anthony Lanzillo

Hosadurga Shobha

Huai Huang

Lawrence A. Clevenger

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

CPC Code

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