Patent attributes
A memory circuit includes first and second active structures extending along a first direction. The first active structure has a shared source portion and first and second drain portions corresponding to source and drain nodes of first and second memory cells. The second active structure has a shared source portion and third and fourth drain portions corresponding to source and drain nodes of third and fourth memory cells. A first conductive structure extends along a second direction and electrically connects the shared source portions of the first and second active structures, and first and second bit lines extend over the first and second active structures. A via plug is part of a direct electrical connection between the first bit line and one of the first or second drain portions or between the second bit line and one of the third or fourth drain portions.
