US Patent 11764259 Vertical field-effect transistor with dielectric fin extension
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US Patent 11764259 Vertical field-effect transistor with dielectric fin extension
Article
Patent abstract
A vertical field-effect transistor includes a substrate comprising a semiconductor material; a first set of fins formed from the semiconductor material and extending vertically with respect to the substrate; and a second set of fins extending vertically with respect to the substrate, wherein ones of the second set of fins abut ones of the first set of fins. The second set of fins comprises a dielectric material.
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Patent Inventor Names
Chen Zhang
Kangguo Cheng
Tenko Yamashita
Wenyu Xu
Xin Miao
Date of Patent
September 19, 2023
Patent Application Number
17384307
Date Filed
July 23, 2021
Patent Citations
Patent Primary Examiner
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