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US Patent 11764259 Vertical field-effect transistor with dielectric fin extension

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
July 23, 2021
Date of Patent
September 19, 2023
Patent Application Number
17384307
Patent Citations
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US Patent 9755073 Fabrication of vertical field effect transistor structure with strained channels
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US Patent 9793401 Vertical field effect transistor including extension and stressors
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US Patent 9806173 Channel-last replacement metal-gate vertical field effect transistor
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US Patent 9882047 Self-aligned replacement metal gate spacerless vertical field effect transistor
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US Patent 10043891 Replacement metal gate scheme with self-alignment gate for vertical field effect transistors
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US Patent 10084094 Wrapped source/drain contacts with enhanced area
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US Patent 10886269 Semiconductor device and manufacturing method thereof
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US Patent 10453940 Vertical field effect transistor with strained channel region extension
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US Patent 10943830 Self-aligned structure for semiconductor devices
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US Patent 7683428 Vertical Fin-FET MOS devices
•••
Patent Inventor Names
Xin Miao
Kangguo Cheng
Tenko Yamashita
Wenyu Xu
Chen Zhang
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11764259
Patent Primary Examiner
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Mohammad M Hoque
CPC Code
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H01L 29/4983
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H01L 29/4966
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H01L 29/66666
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H01L 29/0649
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H01L 29/41741
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H01L 29/7827

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