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US Patent 11776857 Semiconductor device
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Patent
Date Filed
January 3, 2022
Date of Patent
October 3, 2023
Patent Application Number
17567403
Patent Citations
US Patent 11239120 Semiconductor device
US Patent 9704737 Semiconductor device and method for fabricating the same
US Patent 9728643 Semiconductor devices having a spacer on an isolation region
US Patent 7535061 Fin-field effect transistors (Fin-FETs) having protection layers
US Patent 7902035 Semiconductor device having multiple fin heights
US Patent 8748989 Fin field effect transistors
US Patent 8963279 Semiconductor device isolation structures
US Patent 9159832 Semiconductor fin structures and methods for forming the same
US Patent 9337260 Shallow trench isolation in bulk substrate
US Patent 9343370 Method for fabricating semiconductor device
•••
Patent Inventor Names
Donghyun Roh
Sunki Min
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11776857
Patent Primary Examiner
Erik Kielin
CPC Code
H01L 27/0924
H01L 21/823821
H01L 27/0886
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