Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sang-Won Park
Bong Soon Lim
Won Bo Shim
Date of Patent
October 10, 2023
Patent Application Number
17840021
Date Filed
June 14, 2022
Patent Citations
...
Patent Primary Examiner
CPC Code
Patent abstract
A non-volatile memory device includes a memory cell array including a plurality of cell strings, each of the plurality of cell strings includes a gate-induced drain leakage (GIDL) transistor and a memory cell group, and a control logic to apply a voltage to each of the plurality of cell strings. The control logic performs a first erase operation of erasing the memory cell groups of each of the plurality of cell strings, a first verification operation of detecting erase results of the memory cell groups of each of the plurality of cell strings, and a program operation of programming the GIDL transistors of some of the plurality of cell strings.
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