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US Patent 11791258 Conductive lines with subtractive cuts

Overview Structured Data Issues Contributors Activity

Is a

Patent

Date Filed

February 24, 2022

Date of Patent

October 17, 2023

Patent Application Number

17679719

Patent Citations

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US Patent 8954913 Methods of generating circuit layouts that are to be manufactured using SADP routing techniques and virtual non-mandrel mask rules

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US Patent 9711372 Double patterning method

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US Patent 9818640 Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines

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US Patent 10347506 Multiple patterning method using mask portions to etch semiconductor substrate

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US Patent 9818641 Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines

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US Patent 11276639 Conductive lines with subtractive cuts

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US Patent 8148052 Double patterning for lithography to increase feature spatial density

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US Patent 8921225 Method for off-grid routing structures utilizing self aligned double patterning (SADP) technology

Patent Inventor Names

Kisik Choi

Nicholas Anthony Lanzillo

Robert Robison

Christopher J. Penny

Lawrence A. Clevenger

Brent Anderson

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11791258

Patent Primary Examiner

CPC Code

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