Golden has been acquired by ComplyAdvantage.Read about it here ⟶

‌

US Patent 11804439 Reducing RC delay in semiconductor devices

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

May 16, 2022

Date of Patent

October 31, 2023

Patent Application Number

17745509

Patent Citations

US Patent 8232618 Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approach

US Patent 9406804 FinFETs with contact-all-around

US Patent 9443769 Wrap-around contact

US Patent 9520482 Method of cutting metal gate

US Patent 9548366 Self aligned contact scheme

US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern

US Patent 9831183 Contact structure and method of forming

US Patent 9859386 Self aligned contact scheme

US Patent 10157778 Semiconductor structure and manufacturing method thereof

US Patent 10211146 Air gap over transistor gate and related method

•••

Patent Inventor Names

Gulbagh Singh

Po-Jen Wang

Kun-Tsang Chuang

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

Patricia D Valenzuela

CPC Code

•••

Find more entities like US Patent 11804439 Reducing RC delay in semiconductor devices

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Golden Query Tool