Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hock Chun Chin0
Date of Patent
November 28, 2023
0Patent Application Number
170655080
Date Filed
October 7, 2020
0Patent Citations
0
Patent Primary Examiner
Patent abstract
A three-dimensional (3D) memory device includes a channel structure extending along a first direction and a control gate structure extending along a second direction around the channel structure. Preferably, channel structure includes a negative capacitance (NC) insulating layer, a charge trap structure, and a channel layer, in which the NC insulating layer includes HfZrO
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